Galaxy Century Microelectronics RB461F
Schottky Barrier Diode
| Part No. | RB461F |
|---|---|
| Datasheet | RB461F Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Small total capacitance.● Power dissipation.(PD=150mW) Pb Lead-free Production specification RB461F
APPLICATIONS
● For general purpose applications. ORDERING INFORMATION Type No. Marking RB461F 3B SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Diode reverse voltage VR 20 Forward continuous Current IF 700 Power Dissipation Pd 150 Junction temperature Tj 150 Storage temperature range Tstg -55 to +150 Unit V mA mW ℃ ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Reverse breakdown voltage V(BR)R IR=1mA Reverse current Forward voltage IR VR=20V VF IF=700mA MIN Typ. 20 MAX 200 0.49 UNIT V μA V F025 Rev.A 1 Production specification Schottky Barrier Diode RB461F TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified F025 Rev.A 2 Schottky Barrier Diode PACKA
