• Part: RB461F
  • Description: Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: Galaxy Microelectronics
  • Size: 234.38 KB
Download RB461F Datasheet PDF
Galaxy Microelectronics
RB461F
RB461F is Schottky Barrier Diode manufactured by Galaxy Microelectronics.
FEATURES - Small total capacitance. - Power dissipation.(PD=150m W) Pb Lead-free Production specification APPLICATIONS - For general purpose applications. ORDERING INFORMATION Type No. Marking 3B SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Diode reverse voltage VR 20 Forward continuous Current Power Dissipation Pd 150 Junction temperature Tj 150 Storage temperature range Tstg -55 to +150 Unit V m A m W ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Reverse breakdown voltage V(BR)R IR=1m A Reverse current Forward voltage IR VR=20V VF IF=700m A MIN Typ. 20 200 0.49 UNIT V μA...