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GME

SH32F Datasheet Preview

SH32F Datasheet

Schottky Barrier Rectifiers

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Schottky Barrier Rectifiers
Production specification
SH32F--SH34F
Features
Metal silicon junction, majority carrier conduction
High surge capability
High temperature soldering guaranteed:
260°C/10 seconds
High current capability, low forward voltage drop
RoHS Compliant
Mechanical Data
Case: SMAF molded plastic
Molding compound, UL flammability classification rating 94V-0
Terminals: Solder plated, solderable per MIL- STD-202,Method 208
Polarity: Color band denotes cathode end
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol SH32F
SH33F
Peak repetitive reverse voltage
V RRM
20
30
RMS reverse voltage
V RMS
14
21
DC blocking voltage
V DC
20
30
Maximum average forward output current
I F(AV)
3.0
Peak forward surge current,
8.3ms single half-sine-wave
I FSM
80
SH34F
40
28
40
Thermal Characteristics
Parameter
Symbol SH32F
SH33F
Typical thermal resistance
(Note 1)
R ΘJA
R ΘJC
R ΘJL
78
18
20
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
T STG
- 55 ---- + 150
Note:
1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas
SH34F
Units
V
V
V
A
A
Units
°C /W
°C
°C
SMF421AA
Rev.B
www.gmesemi.com




GME

SH32F Datasheet Preview

SH32F Datasheet

Schottky Barrier Rectifiers

No Preview Available !

Schottky Barrier Rectifiers
Production specification
SH32F--SH34F
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Parameter
Symbol
Test conditions
Typ.
Max.
Maximum instantaneous
forward voltage(Note 1)
VF IF=3.0A
Maximum Reverse current
(Note 2)
IR Rated VR,
Note:
1.Pulse test: 300us pulse width, 1 % duty cycle
2.Pulse test: Pulse width 40ms
@TA=25°C
@TJ=25°C
@TJ=100°C
--
--
--
0.55
500
20
Units
V
μA
mA
SMF421AA
Rev.B
www.gmesemi.com


Part Number SH32F
Description Schottky Barrier Rectifiers
Maker GME
Total Page 4 Pages
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