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SH32N65DM6AG Datasheet Automotive-grade N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: SH32N65DM6AG Datasheet Automotive-grade N-channel 650 V, 89 mΩ typ.

General Description

This device bines two MOSFETs in a half-bridge topology.

The ACEPACK SMIT is a very pact and rugged power module in a surface mount package for easy assembly.

Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad.

Key Features

  • Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A.
  • AQG 324 qualified.
  • Half-bridge power module.
  • 650 V blocking voltage.
  • Fast recovery body diode.
  • Very low switching energies.
  • Low package inductance.
  • Dice on direct bond copper (DBC) substrate.
  • Low thermal resistance.
  • Isolation rating of 3.4 kVrms/min.

More Datasheets from STMicroelectronics

Part Number Description

SH32N65DM6AG Distributor