BAV19
BAV19 is Small-Signal Diode manufactured by Good-Ark Semiconductor.
Features
Silicon Epitaxial Planar Diode For general purpose This diode is also available in other case styles including: the Mini MELF case with the type designation BAV101 to BAV103.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g ..
Maximum Ratings and Thermal Characteristics
(TA=25o C unless otherwise noted.)
Parameter Continuous reverse voltage BAV19 BAV20 BAV21 BAV19 BAV20 BAV21
(1)
Symbol
Limit 100 150 200 120 200 250 250 200 625 1.0 500 430 175 -65 to +175
Unit
Volts
Repetitive peak reverse voltage
VRRM IF IF(AV) IFRM
Volts m A m A m A Amp m W o
Forward DC current at Tamb=25o C
Rectified current (Average) half wave rectification with resist. load at Tamb=25o C (1) Repetitive peak forward current at f>50Hz, Θ=180O, Tamb=25o C (1) Surge forward current at t<1s and Tj=25 C Power dissipation at Tamb=25o C
(1) o
IFSM Ptot
(1)
Thermal resistance junction to ambient air Junction temperature
(1)
RθJA Tj
C/W o
Storage temperature range
Notes:
(1)
TS o
1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
Electrical Characteristics
(TJ=25o C unless otherwise noted.)
Parameter Forward voltage BAV19 BAV19 BAV20 BAV20 BAV21 BAV21 Symbol VF Test Condition IF=100m A IF=200m A VR=100V VR=100V, Tj=100OC VR=150V VR=150V, Tj=100OC VR=200V VR=200V, Tj=100OC IF=10m A VR=0V, f=1MHz IF=30m A, IR=30m A Irr=3m A, RL=100Ω Min. Typ. 5 1.5 Max. 1.00 1.25 100 15 100 15 100 15 50 Unit Volts n A u A n A u A n A u A Ω p F ns
Leakage current
Dynamic forward resistance Capacitance .. Reverse recovery time
γf Ctot trr
RATINGS AND CHARACTERISTIC...
