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MMDT3904 Description

Features Epitaxial planar die construction Ideal for low power amplification and switching MMDT3904 Dual NPN Transistor Ratings (TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol VCBO.

MMDT3904 Key Features

  • Epitaxial planar die construction
  • Ideal for low power amplification and switching