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MMDT3904 - NPN General Purpose Transistor

Key Features

  • Power Dissipation PCM: 200mW (Ta=25°C).
  • Collector Current ICM: 200mA.
  • Collector.
  • Base Voltage V(BR)CBO: 60V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente MMDT3904 0.2A, 60V NPN General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES  Power Dissipation PCM: 200mW (Ta=25°C)  Collector Current ICM: 200mA  Collector – Base Voltage V(BR)CBO: 60V MARKING K6N MA PACKAGING DIMENSION Package MPQ SOT-363 3K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO ICM PCM TJ, TSTG Ratings 60 40 5 0.2 200 150, -55 ~ 150 SOT-363 A E L B F CH DG K J REF. A B C D E F Millimeter Min. 1.80 1.80 1.15 0.80 Max. 2.20 2.45 1.35 1.10 1.10 1.50 0.10 0.35 REF.