SeCoS Halbleitertechnologie GmbH MMDT3906
PNP Silicon Multi-Chip Transistor
| Part No. | MMDT3906 |
|---|---|
| Datasheet | MMDT3906 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Silicon Multi-Chip Transistor |
| Buy | Stock & Price |
FEATURES
RoHS Compliant Product $ VXIIL[ RI & VSHFLILHV KDORJHQ OHDG IUHH Power dissipation. PCM : 0.2 W (Tamp.=25OC) Collector current ICM : - 0.2 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55OC ~ +150OC C2 B1 E1 E2 B2 C1 Marking : K3N or A2 SOT-363 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35 .045(1.15 .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
˄Tamb=25ć unless otherwise specified˅ Parameter Symbol Test conditions MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturatio