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MMDT3906 - PNP Silicon Multi-Chip Transistor

Key Features

  • s RoHS Compliant Product $VXIIL[RI&.

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Elektronische Bauelemente MMDT3906 PNP Silicon Multi-Chip Transistor * Features RoHS Compliant Product $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH Power dissipation. PCM : 0.2 W (Tamp.=25OC) Collector current ICM : - 0.2 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55OC ~ +150OC C2 B1 E1 E2 B2 C1 Marking : K3N or A2 SOT-363 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35 .045(1.15 .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.