Datasheet Summary
Elektronische Bauelemente
PNP Silicon Multi-Chip Transistor
- Features
RoHS pliant Product $VXIIL[RI&VSHFLILHVKDORJHQOHDGIUHH
Power dissipation. PCM : 0.2 W (Tamp.=25OC)
Collector current ICM :
- 0.2 A
Collector -base voltage V(BR) CBO :
- 40 V
Operating & storage junction temperature Tj, Tstg : -55OC ~ +150OC
C2 B1 E1
E2 B2 C1
Marking : K3N or A2
SOT-363
.055(1.40) .047(1.20)
.026TYP (0.65TYP)
.021REF (0.525)REF
8o 0o
.096(2.45) .085(2.15)
.053(1.35 .045(1.15
.014(0.35) .006(0.15) .087(2.20) .079(2.00)
.043(1.10) .035(0.90)
.018(0.46) .010(0.26)
.006(0.15) .003(0.08)
.004(0.10) .000(0.00)
.039(1.00) .035(0.90)
Dimensions in inches and...
