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SSF5510G - N-Channel MOSFET

Download the SSF5510G datasheet PDF. This datasheet also covers the SSF5510G-GOOD variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF5510G is a new generation of middle voltage and high current N

Channel enhancement mode trench power MOSFET.

This new technology increases the device reliability and electrical parameter repeatability.

SS5510G is assembled in high reliability and qualified assembly house.

Key Features

  • Advanced trench process technology.
  • Ultra low Rdson, typical 8mohm.
  • High avalanche energy, 100% test.
  • Fully characterized avalanche voltage and current.
  • Lead free product ID =56A BV=55V R DS (ON) =8mohm （typ. ）.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF5510G-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF5510G
Manufacturer GOOD-ARK
File Size 475.93 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF5510G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSF5510G Preliminary FEATURES  Advanced trench process technology  Ultra low Rdson, typical 8mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =56A BV=55V R DS (ON) =8mohm （typ.） DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SS5510G is assembled in high reliability and qualified assembly house.