SSF5508A Overview
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute Max Rating: Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① IDM Pulsed Drain Current② ISM Pulsed Source Current.(Body Diode) Power Dissipation③ PD @TC = 25°C Linear derating factor VDS Drain-Source Voltage VGS Gate-to-Source Voltage dv/dt Peak diode recovery voltage EAS Single Pulse Avalanche Energy @ L=0.3mH② IAR Avalanche Current @ L=0.3mH② TJ TSTG Operating Junction and Storage Temperature Range Max.
Key Features
- Advanced trench MOSFET process technology
- Special designed for convertors and power controls
- Ultra low on-resistance
- 175℃ operating temperature
- High Avalanche capability and 100% tested
