SSF5508 - MOSFET

Description

The SSF5508 is a new generation of middle voltage and high current N

Channel enhancement mode trench power MOSFET.

This new technology increases the device reliability and electrical parameter repeatability.

SSF5508 is assembled in high reliability and qualified assembly house.

Silikron Semiconductor Co

📥 Download Datasheet

Datasheet Details

Part number	SSF5508
Manufacturer	SilikrON Semiconductor Co
File Size	330.81 KB
Description	MOSFET
Datasheet	SSF5508 Datasheet
Additional preview pages of the SSF5508 datasheet.

📁 Similar Datasheet

SSF5508 - 55V N-Channel MOSFET (GOOD-ARK)
SSF5508A - 55V N-Channel MOSFET (GOOD-ARK)
SSF5508A - MOSFET (Silikron Semiconductor)
SSF5508D - N-Channel MOSFET (GOOD-ARK)
SSF5508U - MOSFET (Silikron Semiconductor)
SSF5506 - MOSFET (Silikron Semiconductor)
SSF5506 - N-Channel MOSFET (GOOD-ARK)
SSF5510G - N-Channel MOSFET (GOOD-ARK)
SSF53A0E - MOSFET (Silikron)
SSF5JG - ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER (Gulf Semiconductor)

Other Datasheets by Silikron Semiconductor Co

SSF1016 - Power switching application
SSF1020 - Power switching application
SSF2300A - Battery protection
SSF2300B - Battery protection
SSF2301 - PWM applications
SSF2301B - PWM applications
SSF2301C - PWM applications
SSF2302 - Battery protection

Full PDF Text Transcription

Click to expand full text

SSF5508 Feathers: Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current ID =110A BV=55V Rdson=4.5 mΩ(typ.) www.DataSheet4U.com Description: The SSF5508 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF5508 is assembled in high reliability and qualified assembly house.

Published: Mar 6, 2010 |