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1N4451 - SILICON EPITAXIAL PLANAR DIODES

This page provides the datasheet information for the 1N4451, a member of the 1N4451_GOOD SILICON EPITAXIAL PLANAR DIODES family.

Features

  • Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max.

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Datasheet Details

Part number 1N4451
Manufacturer GOOD-ARK Electronics
File Size 23.71 KB
Description SILICON EPITAXIAL PLANAR DIODES
Datasheet download datasheet 1N4451 Datasheet
Additional preview pages of the 1N4451 datasheet.

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Full PDF Text Transcription

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1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 Max. junction temperature Tj 200 200 200 175 175 200 200 200 175 175 175 175 Max.
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