GSI Technology GS4576C18L
576Mb CIO Low Latency DRAM
| Part No. | GS4576C18L |
|---|---|
| Datasheet | GS4576C18L Download |
| Manufacturer |  GSI Technology |
| Description | 576Mb CIO Low Latency DRAM |
| Buy | Stock & Price |
FEATURES
● Pin- and function-compatible with Micron RLDRAM® II● 533 MHz DDR operation (1.067Gb/s/pin data rate)
● 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
● 16M x 36, 32M x 18, and 64M x 9 organizations available
● 8 banks
● Reduced cycle time (15 ns at 533 MHz)
● Address Multiplexing (Nonmultiplexed address option available)
● SRAM-type interface
● Programmable Read Latency (RL), row cycle time, and burst sequence length
● Balanced Read and Write Latencies in order to optimize data bus utilization
● Data mask for Write commands
● Differential input clocks (CK, CK)
● Differential input data clocks (DKx, DKx)
● On-chip DLL generates CK edge-aligned data and output data clock signals
● Data valid signal (QVLD)
● 32 ms refresh (16K refresh for eac
