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GS4576C18GL - 576Mb CIO Low Latency DRAM

Download the GS4576C18GL datasheet PDF. This datasheet also covers the GS4576C09L variant, as both devices belong to the same 576mb cio low latency dram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pin- and function-compatible with Micron RLDRAM® II.
  • 533 MHz DDR operation (1.067Gb/s/pin data rate).
  • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • 16M x 36, 32M x 18, and 64M x 9 organizations available.
  • 8 banks.
  • Reduced cycle time (15 ns at 533 MHz).
  • Address Multiplexing (Nonmultiplexed address option available).
  • SRAM-type interface.
  • Programmable Read Latency (RL), row cycle time, and burst sequence.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GS4576C09L-GSITechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GS4576C18GL
Manufacturer GSI Technology
File Size 2.05 MB
Description 576Mb CIO Low Latency DRAM
Datasheet download datasheet GS4576C18GL Datasheet

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Other Datasheets by GSI Technology

Part Number Description
GS4576C18GM 576Mb CIO Low Latency DRAM
GS4576C18L 576Mb CIO Low Latency DRAM
GS4576C09GL 576Mb CIO Low Latency DRAM
GS4576C09GM 576Mb CIO Low Latency DRAM
GS4576C09L 576Mb CIO Low Latency DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II) 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin data rate) • 38.