GS4576C09L - 576Mb CIO Low Latency DRAM

GSI Technology

Key Features

Pin- and function-compatible with Micron RLDRAM® II.
533 MHz DDR operation (1.067Gb/s/pin data rate).
38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
16M x 36, 32M x 18, and 64M x 9 organizations available.
8 banks.
Reduced cycle time (15 ns at 533 MHz).
Address Multiplexing (Nonmultiplexed address option available).
SRAM-type interface.
Programmable Read Latency (RL), row cycle time, and burst sequence.

GS4576C09L 576mb cio low latency dram by GSI Technology - Datasheet Preview

Datasheet Details

Part number	GS4576C09L
Manufacturer	GSI Technology
File Size	2.05 MB
Description	576Mb CIO Low Latency DRAM
Datasheet	GS4576C09L Datasheet

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Other Datasheets by GSI Technology

Part Number	Description
GS4576C09GL	576Mb CIO Low Latency DRAM
GS4576C09GM	576Mb CIO Low Latency DRAM
GS4576C18GL	576Mb CIO Low Latency DRAM
GS4576C18GM	576Mb CIO Low Latency DRAM
GS4576C18L	576Mb CIO Low Latency DRAM

Full PDF Text Transcription (Reference)

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GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II) 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin data rate) • 38.