GS4576C09GM Overview
GS4576C09/18/36GM 144-Ball FBGA mercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II) 533 MHz 300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8.
GS4576C09GM Key Features
- Pin- and function-patible with Micron RLDRAM® II
- 533 MHz DDR operation (1.067Gb/s/pin data rate)
- 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
- 8 banks
- Reduced cycle time (15 ns at 533 MHz)
- Address Multiplexing (Nonmultiplexed address option
- SRAM-type interface
- Programmable Read Latency (RL), row cycle time, and burst
- Balanced Read and Write Latencies in order to optimize data
- Data mask for Write mands