GS78116B - 512K x 16 8Mb Asynchronous SRAM

Symbol A0 to A18 DQ1 to DQ16 CE WE OE VDD VSS NC 10, 12, 15 ns 3.3 V VDD Description Address input Data input/output Chip enable input Write enable input Output enable input +3.3 V power supply Ground No connect Description The GS78116 is a high speed CMOS static RAM organized as 524,288-words b

• Fast access time: 10, 12, 15 ns.
• CMOS low power operation: 300/250/220/180 mA at minimum cycle time.
• Single 3.3 V ± 0.3 V power supply.
• All inputs and outputs are TTL-compatible.
• Fully static operation.
• Industrial Temperature Option:.
• 40° to 85°C.
• 14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array package 512K x 16 8Mb Asynchronous SRAM Pin.