GS78116B - 512K x 16 8Mb Asynchronous SRAM

GSI Technology

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Datasheet Details

Part number	GS78116B
Manufacturer	GSI Technology
File Size	407.55 KB
Description	512K x 16 8Mb Asynchronous SRAM
Datasheet	GS78116B_GSITechnology.pdf

GS78116B Product details

Description

Symbol A0 to A18 DQ1 to DQ16 CE WE OE VDD VSS NC 10, 12, 15 ns 3.3 V VDD Description Address input Data input/output Chip enable input Write enable input Output enable input +3.3 V power supply Ground No connect Description The GS78116 is a high speed CMOS static RAM organized as 524,288-words by 16-bits.Static design eliminates the need for external clocks or timing strobes.The GS78116 operates on a single 3.3 V power supply and all inputs and outputs are TTLcompatible.The GS78116 is ava

Features

Fast access time: 10, 12, 15 ns.
CMOS low power operation: 300/250/220/180 mA at minimum cycle time.
Single 3.3 V ± 0.3 V power supply.
All inputs and outputs are TTL-compatible.
Fully static operation.
Industrial Temperature Option:.
40° to 85°C.
14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array package 512K x 16 8Mb Asynchronous SRAM Pin.

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Published: Jan 11, 2008 |