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GS78108AB - 8Mb Asynchronous SRAM

General Description

The GS78108A is a high speed CMOS Static RAM organized as 1,048,576-words by 8-bits.

Static design eliminates the need for external clocks or timing strobes.

The GS78108operates on a single 3.3 V power supply, and all inputs and outputs are TTL-compatible.

Key Features

  • Fast access time: 8, 10, 12 ns.
  • CMOS low power operation: 240/190/170 mA at minimum cycle time.
  • Single 3.3 V ± 0.3 V power supply.
  • All inputs and outputs are TTL-compatible.
  • Fully static operation.
  • Industrial Temperature Option:.
  • 40° to 85°C.
  • 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array package.
  • RoHS-compliant package available Symbol A0 to A19 DQ1 to DQ8 CE WE OE VDD.

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Datasheet Details

Part number GS78108AB
Manufacturer GSI Technology
File Size 290.29 KB
Description 8Mb Asynchronous SRAM
Datasheet download datasheet GS78108AB Datasheet

Full PDF Text Transcription for GS78108AB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GS78108AB. For precise diagrams, and layout, please refer to the original PDF.

GS78108AB BGA Commercial Temp Industrial Temp 1M x 8 8Mb Asynchronous SRAM 8, 10, 12 ns 3.3 V VDD Features • Fast access time: 8, 10, 12 ns • CMOS low power operation: 24...

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atures • Fast access time: 8, 10, 12 ns • CMOS low power operation: 240/190/170 mA at minimum cycle time • Single 3.3 V ± 0.3 V power supply • All inputs and outputs are TTL-compatible • Fully static operation • Industrial Temperature Option: –40° to 85°C • 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array package • RoHS-compliant package available Symbol A0 to A19 DQ1 to DQ8 CE WE OE VDD Description The GS78108A is a high speed CMOS Static RAM organized as 1,048,576-words by 8-bits. Static design eliminates the need for external clocks or timing strobes. The GS78108operates on a single 3.3 V power supply, and all inp

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