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GSI Technology

GS81302S08E Datasheet Preview

GS81302S08E Datasheet

144Mb SigmaSIO DDR -II Burst of 2 SRAM

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GS81302S08/09/18/36E-375/350/333/300/250
165-Bump BGA
Commercial Temp
Industrial Temp
144Mb SigmaSIOTM DDR -II
Burst of 2 SRAM
375 MHz–250 MHz
1.8 V VDD
1.8 V and 1.5 V I/O
Features
• Simultaneous Read and Write SigmaSIO™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• DLL circuitry for wide output data valid window and future
frequency scaling
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
SigmaSIOFamily Overview
GS81302S08/09/18/36 are built in compliance with the
SigmaSIO DDR-II SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. These are the first in a family of wide, very low
voltage HSTL I/O SRAMs designed to operate at the speeds
needed to implement economical high performance
networking systems.
Clocking and Addressing Schemes
A Burst of 2 SigmaSIO DDR-II SRAM is a synchronous
device. It employs dual input register clock inputs, K and K.
The device also allows the user to manipulate the output
register clock input quasi independently with dual output
register clock inputs, C and C. If the C clocks are tied high, the
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
JEDEC Std. MO-216, Variation CAB-1
K clocks are routed internally to fire the output registers
instead. Each Burst of 2 SigmaSIO DDR-II SRAM also
supplies Echo Clock outputs, CQ and CQ, which are
synchronized with read data output. When used in a source
synchronous clocking scheme, the Echo Clock outputs can be
used to fire input registers at the data’s destination.
Each internal read and write operation in a SigmaSIO DDR-II
B2 RAM is two times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaSIO DDR-II B2 is always one address pin less
than the advertised index depth (e.g., the 16M x 8 has an 8M
addressable index).
Parameter Synopsis
tKHKH
tKHQV
-375
2.66 ns
0.45 ns
-350
2.86 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
Rev: 1.03b 12/2011
1/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology




GSI Technology

GS81302S08E Datasheet Preview

GS81302S08E Datasheet

144Mb SigmaSIO DDR -II Burst of 2 SRAM

No Preview Available !

GS81302S08/09/18/36E-375/350/333/300/250
16M x 8 SigmaQuad SRAM—Top View
123456789
A CQ SA SA R/W NW1 K SA LD SA
B
NC
NC
NC
SA
NC/SA
(288Mb)
K
NW0 SA
NC
C NC NC NC VSS SA SA SA VSS NC
D NC D4 NC VSS VSS VSS VSS VSS NC
E
NC
NC
Q4
VDDQ
VSS
VSS
VSS VDDQ NC
F
NC
NC
NC
VDDQ
VDD
VSS
VDD VDDQ NC
G
NC D5
Q5
VDDQ
VDD
VSS
VDD VDDQ NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD VDDQ NC
K
NC
NC
NC
VDDQ
VDD
VSS
VDD VDDQ NC
L
NC
Q6
D6
VDDQ
VSS
VSS
VSS VDDQ NC
M NC NC NC VSS VSS VSS VSS VSS NC
N NC D7 NC VSS SA SA SA VSS NC
P NC NC Q7 SA SA C SA SA NC
R
TDO TCK
SA
SA
SA
C
SA SA SA
11 x 15 Bump BGA—15 x 17 mm2 Body—1 mm Bump Pitch
Notes:
1. NW0 controls writes to D0:D3. NW1 controls writes to D4:D7.
2. B5 is the expansion address.
10
SA
NC
NC
NC
D2
NC
NC
VREF
Q1
NC
NC
NC
NC
NC
TMS
11
CQ
Q3
D3
NC
Q2
NC
NC
ZQ
D1
NC
Q0
D0
NC
NC
TDI
Rev: 1.03b 12/2011
2/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology


Part Number GS81302S08E
Description 144Mb SigmaSIO DDR -II Burst of 2 SRAM
Maker GSI Technology
Total Page 30 Pages
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