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GS816136DD-xxxV Datasheet - GSI Technology

18Mb Sync Burst SRAMs

GS816136DD-xxxV Features

* IEEE 1149.1 JTAG-compatible Boundary Scan

* 1.8 V or 2.5 V core power supply

* 1.8 V or 2.5 V I/O supply

* LBO pin for Linear or Interleaved Burst mode

* Internal input resistors on mode pins allow floating mode pins

* Byte Write (BW) and/or Global W

GS816136DD-xxxV General Description

Applications The GS8161xxD(GT/D)-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applicati.

GS816136DD-xxxV Datasheet (311.64 KB)

Preview of GS816136DD-xxxV PDF

Datasheet Details

Part number:

GS816136DD-xxxV

Manufacturer:

GSI Technology

File Size:

311.64 KB

Description:

18mb sync burst srams.
GS8161xxD(GT/D)-xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 333 MHz

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GS816136DD-xxxV 18Mb Sync Burst SRAMs GSI Technology

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