GS8161E18D - 18Mb SyncBurst SRAMs

Product Overview

GSI Technology

Datasheet Details

Part number	GS8161E18D
Manufacturer	GSI Technology
File Size	1.19 MB
Description	18Mb SyncBurst SRAMs
Datasheet	GS8161E18D Datasheet
Additional preview pages of the GS8161E18D datasheet.

Product details

Description

Applications The GS8161E18D(GT/D)/GS8161E32D(D)/GS8161D36D(GT/D) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

FT pin for user-configurable flow through or pipeline operation.
Dual Cycle Deselect (DCD) operation.
IEEE 1149.1 JTAG-compatible Boundary Scan.
2.5 V or 3.3 V +10%/.
10% core power supply.
2.5 V or 3.3 V I/O supply.
LBO pin for Linear or Interleaved Burst mode.
Internal input resistors on mode pins allow floating mode pins.
Default to Interleaved Pipeline mode.
Byte Write (BW) and/or Global Write (GW) opera.

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Other Datasheets by GSI Technology

GS8161E18DD - 18Mb SyncBurst SRAMs
GS8161E18DGT - 18Mb SyncBurst SRAMs
GS8161E18B - (GS8161E18B - GS8161E36B) Sync Burst SRAMs
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GS8161E32D - 18Mb SyncBurst SRAMs
GS8161E32DD - 18Mb SyncBurst SRAMs

Published: Jun 20, 2024 |