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GS8161E18 Datasheet (gs8161e18 - Gs8161e36) Sync Burst Srams

Manufacturer: GSI

Overview: .. GS8161E18(T/D)/GS816132(D)/GS816136(T/D) 100-Pin TQFP & 165-Bump BGA mercial Temp Industrial.

Datasheet Details

Part number GS8161E18
Manufacturer GSI
File Size 936.23 KB
Description (GS8161E18 - GS8161E36) Sync Burst SRAMs
Datasheet GS8161E18_GSI.pdf

General Description

Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs,

Key Features

  • FT pin for user-configurable flow through or pipeline operation.
  • Dual Cycle Deselect (DCD) operation.
  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Default to Interleaved Pipeline mode.
  • Byte Write (BW) and/or Global Write (GW) opera.

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