GS8161E18B
Features
- FT pin for user-configurable flow through or pipeline operation
- Dual Cycle Deselect (DCD) operation
- IEEE 1149.1 JTAG-patible Boundary Scan
- 2.5 V or 3.3 V +10%/- 10% core power supply
- 2.5 V or 3.3 V I/O supply ..
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 100-lead TQFP package
- Ro HS-pliant 100-lead TQFP and 165-bump BGA packages available
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
250 MHz- 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O
Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user via the FT mode...
