• Part: GS8161E18DD
  • Description: 18Mb SyncBurst SRAMs
  • Manufacturer: GSI Technology
  • Size: 1.19 MB
Download GS8161E18DD Datasheet PDF
GSI Technology
GS8161E18DD
GS8161E18DD is 18Mb SyncBurst SRAMs manufactured by GSI Technology.
- Part of the GS8161E18D comparator family.
GS8161E18D(GT/D)/GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA mercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs 400 MHz- 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features - FT pin for user-configurable flow through or pipeline operation - Dual Cycle Deselect (DCD) operation - IEEE 1149.1 JTAG-patible Boundary Scan - 2.5 V or 3.3 V +10%/- 10% core power supply - 2.5 V or 3.3 V I/O supply - LBO pin for Linear or Interleaved Burst mode - Internal input resistors on mode pins allow floating mode pins - Default to Interleaved Pipeline mode - Byte Write (BW) and/or Global Write (GW) operation - Internal self-timed write cycle - Automatic...