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GS8256418GB-250 Datasheet

Manufacturer: GSI Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

GS8256418GB-250 datasheet preview

Datasheet Details

Part number GS8256418GB-250
Datasheet GS8256418GB-250 GS8256418GB-400 Datasheet (PDF)
File Size 405.66 KB
Manufacturer GSI Technology
Description 288Mb DCD Sync Burst SRAM
GS8256418GB-250 page 2 GS8256418GB-250 page 3

GS8256418GB-250 Overview

Applications The GS8256418/36 is a 301,989,888-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Controls Addresses, data I/Os, chip enable (E1), address burst...

GS8256418GB-250 Key Features

  • FT pin for user-configurable flow through or pipeline operation
  • Single/Dual Cycle Deselect selectable
  • IEEE 1149.1 JTAG-patible Boundary Scan
  • ZQ mode pin for user-selectable high/low output drive
  • 2.5 V +10%/-10% core power supply
  • 3.3 V +10%/-10% core power supply
  • 2.5 V or 3.3 V I/O supply
  • LBO pin for Linear or Interleaved Burst mode
  • Internal input resistors on mode pins allow floating mode pins
  • Byte Write (BW) and/or Global Write (GW) operation
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More Datasheets from GSI Technology

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Part Number Description
GS8256418GB-200 288Mb DCD Sync Burst SRAM
GS8256418GB-333 288Mb DCD Sync Burst SRAM
GS8256418GB-400 288Mb DCD Sync Burst SRAM
GS8256418GD-200 288Mb DCD Sync Burst SRAM
GS8256418GD-250 288Mb DCD Sync Burst SRAM
GS8256418GD-333 288Mb DCD Sync Burst SRAM
GS8256418GD-400 288Mb DCD Sync Burst SRAM
GS8256436GB-200 288Mb DCD Sync Burst SRAM
GS8256436GB-250 288Mb DCD Sync Burst SRAM
GS8256436GB-333 288Mb DCD Sync Burst SRAM

GS8256418GB-250 Distributor

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