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GS8322Z36B Datasheet Preview

GS8322Z36B Datasheet

36Mb Pipelined and Flow Through Synchronous NBT SRAM

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GS8322Z18(B/E)/GS8322Z36(B/E)/GS8322Z72(C)
119, 165 & 209 BGA
Commercial Temp
Industrial Temp
36Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz133 MHz 2.5
V or 3.3 V VDD
2.5 V or 3.3 V I/O
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
www.DataSheet42U.5.coVmor 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-, 165- or 209-Bump BGA package
Functional Description
The GS8322Z18/36/72 is a 36Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8322Z18/36/72 may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising edge triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8322Z18/36/72 is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 119-bump, 165-bump or 209-bump BGA package.
Parameter Synopsis
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
tKQ(x18/x36)
tKQ(x72)
tCycle
Curr (x18)
Curr (x36)
Curr (x72)
tKQ
tCycle
Curr (x18)
Curr (x36)
Curr (x72)
-250 -225 -200 -166 -150 -133 Unit
2.5 2.7 3.0 3.5 3.8 4.0 ns
3.0 3.0 3.0 3.5 3.8 4.0 ns
4.0 4.4 5.0 6.0 6.7 7.5 ns
285 265 245 220 210 185 mA
350 320 295 260 240 215 mA
440 410 370 320 300 265 mA
6.5 7.0 7.5 8.0 8.5 8.5 ns
6.5 7.0 7.5 8.0 8.5 8.5 ns
205 195 185 175 165 155 mA
235 225 210 200 190 175 mA
315 295 265 255 240 230 mA
Rev: 11/1/04
1/38
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2002, GSI Technology




GSI Technology

GS8322Z36B Datasheet Preview

GS8322Z36B Datasheet

36Mb Pipelined and Flow Through Synchronous NBT SRAM

No Preview Available !

GS8322Z18(B/E)/GS8322Z36(B/E)/GS8322Z72(C)
GS8322Z72C Pad Out—209-Bump BGA—Top View (Package C)
1
A DQG
B DQG
C DQG
www.DataSheet4U.com
D DQG
E DQPG
F DQC
G DQC
H DQC
J DQC
K NC
L DQH
M DQH
N DQH
P DQH
R DQPD
T DQD
U DQD
V DQD
W DQD
2
DQG
DQG
DQG
DQG
DQPC
DQC
DQC
DQC
DQC
NC
DQH
DQH
DQH
DQH
DQPH
DQD
DQD
DQD
DQD
3456789
A E2 A ADV A E3 A
BC BG NC W A BB BF
BH BD NC E1 NC BE BA
VSS NC NC G NC NC VSS
VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
VSS VSS VSS ZQ VSS VSS VSS
VDDQ
VDDQ
VDD
MCH
VDD
VDDQ
VDDQ
VSS VSS VSS MCL VSS VSS VSS
VDDQ
VDDQ
VDD
MCH
VDD
VDDQ
VDDQ
CK NC VSS CKE VSS NC NC
VDDQ
VDDQ
VDD
FT
VDD
VDDQ
VDDQ
VSS VSS VSS MCL VSS VSS VSS
VDDQ
VDDQ
VDD
MCH
VDD
VDDQ
VDDQ
VSS VSS VSS ZZ VSS VSS VSS
VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
VSS NC NC LBO NC NC VSS
NC A NC A A A NC
A A A A1 A A A
TMS TDI A A0 A TDO TCK
11 x 19 Bump BGA—14 x 22 mm2 Body—1 mm Bump Pitch
10
DQB
DQB
DQB
DQB
DQPF
DQF
DQF
DQF
DQF
NC
DQA
DQA
DQA
DQA
DQPA
DQE
DQE
DQE
DQE
11
DQB
DQB
DQB
DQB
DQPB
DQF
DQF
DQF
DQF
NC
DQA
DQA
DQA
DQA
DQPE
DQE
DQE
DQE
DQE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Rev: 1.04 11/2004
2/38
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2002, GSI Technology


Part Number GS8322Z36B
Description 36Mb Pipelined and Flow Through Synchronous NBT SRAM
Maker GSI Technology
Total Page 30 Pages
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