GS8360Z18CQ Description
Preliminary GS81320Z18/36CQ-333M/250M(S/Q/V) GS8680Z18/36CQ-333M/250M(S/Q/V) GS8360Z18/36CQ-333M/250M(S/Q/V) 100-Pin Ceramic QFP Rad-Hard SRAM Military Temp 144Mb/72Mb/36Mb PL/FT Synchronous NBT SRAMs 333 MHz 250 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3.
GS8360Z18CQ Key Features
- Aerospace-Level Product
- NBT (No Bus Turn Around) functionality allows zero wait
- 2.5 V or 3.3 V +10%/-10% core power supply
- 2.5 V or 3.3 V I/O supply
- User-configurable Pipeline and Flow Through mode
- LBO pin for Linear or Interleave Burst mode
- Byte write operation (9-bit Bytes)
- 3 chip enable signals for easy depth expansion
- ZZ Pin for automatic power-down
- 100-pin Ceramic QFP package available