logo

GBC556 Datasheet, GTM

GBC556 Datasheet, GTM

GBC556

datasheet Download (Size : 205.60KB)

GBC556 Datasheet

GBC556 transistor

pnp epitaxial transistor.

GBC556

datasheet Download (Size : 205.60KB)

GBC556 Datasheet

GBC556 Features and benefits

GBC556 Features and benefits

PNP SILICON TRANSISTOR The GBC556 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC546 D.

GBC556 Application

GBC556 Application

or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or applic.

GBC556 Description

GBC556 Description

Features PNP SILICON TRANSISTOR The GBC556 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC546 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A .

Image gallery

GBC556 Page 1 GBC556 Page 2

TAGS

GBC556
PNP
EPITAXIAL
TRANSISTOR
GTM

Manufacturer


GTM

Related datasheet

GBC557

GBC558

GBC546

GBC547

GBC548

GBC327

GBC328

GBC337

GBC338

GBC807

GBC817

GBC846

GBC847

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts