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GE2026 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The GE2026 is designed for general purpose application.

Key Features

  • Low Collector Saturation Voltage : VCE (sat) =1.0V (Max. ) @ IC=2A, IB=0.2A, Package Dimensions Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Device TA=25к PD Dissipation TC=25к PD Junction Temperature TJ Storage Temperature Tstg REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 1.

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Datasheet Details

Part number GE2026
Manufacturer GTM
File Size 382.21 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GE2026 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISSUED DATE :2005/09/05 REVISED DATE : GE2026 NPN EPITAXIAL PLANAR TRANSISTOR Description The GE2026 is designed for general purpose application. Features ԦLow Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ IC=2A, IB=0.2A, Package Dimensions Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Device TA=25к PD Dissipation TC=25к PD Junction Temperature TJ Storage Temperature Tstg REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.