GE2761 Datasheet | GTM

Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current Symbol - /A VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 IAR Tj, Tstg Ratings 600/650 30 10 4.4 18 104 0.8 10 -55 ~ +150 Unit V V A A A W W/ A Total Power Dissipation Linear Derating Factor Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.2 62 Unit /W /W 1/4 ISSUED DATE :2005/05/18 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 600 650 2.0 Typ. 0.6 4.5 53 10 15 16 20 82 36 2770 320 8 Max. 4.0 100 10 100 1.0 85 4430 p F Ns n C Unit V V V/ V S n A u A u A Test Conditions VGS=0, ID=250u A VGS=0, ID=250u A A Symbol BVDSS BVDSS / Tj Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=3.5A VGS= 30V Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=3.5A ID=10A VDS=520V VGS=10V VDD=320V ID=10A VGS=10V RG=10 RD=30 VGS=0V VDS=15V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter Forward On Voltage3 Reverse Recovery Time Symbol VSD...