GE2026
GE2026 is NPN EPITAXIAL PLANAR TRANSISTOR manufactured by GTM.
Description
The GE2026 is designed for general purpose application.
Features
- Low Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ IC=2A, IB=0.2A,
Package Dimensions
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
Base Current
Total Device
TA=25к
Dissipation
TC=25к
Junction Temperature
Storage Temperature
Tstg
REF.
A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25
2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Ratings
Unit
к
-55 ~...
