GE75NF60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM
Key Features
High Density Cell Design for Ultra Low On-Resistance.
High power and Current handing capability
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Cu.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/01 REVISED DATE :
GE75NF60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 12m 75A
The GE75NF60 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*High Density Cell Design for Ultra Low On-Resistance *High power and Current handing capability
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.
GE75NF60 Datasheet
