GE75N07 Datasheet | GTM

Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 75 ±20 80 56 300 156 0.125 450 -55 ~ +150 Unit V V A A A W W/ m J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS Tj, Tstg Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 0.8 62 Unit /W /W Page: 1/4 ISSUED DATE :2006/06/06 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 75 1.0 Typ. 0.08 40 83 10 51 15 73 340 200 4270 690 320 1.8 Max. 3.0 ±100 10 100 11 130 6830 2.7 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=1m A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=40A VGS= ±20V VDS=60, VGS=0 VDS=75V, VGS=0 VGS=10V, ID=40A ID=40A VDS=60V VGS=4.5V VDS=40V ID=30A VGS=10V RG=10 RD=1.33 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Source-Drain Diode Parameter Forward On...