GE75NF60 Datasheet | GTM

Description Features - High Density Cell Design for Ultra Low On-Resistance - High power and Current handing capability Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 60 ±25 75 56 200 268 1.78 350 38 -55 ~ +175 Unit V V A A A W W/ m J A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 0.56 60 Unit /W /W Page: 1/4 ISSUED DATE :2006/12/01 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) unless otherwise specified) Min. 60 2.0 Typ. 34 114 33 18 21 39 70 24 7000 400 87 Max. 4.0 ±100 1 5 12 p F ns n C Unit V V S n A u A u A m Test Conditions VGS=0, ID=250u A VDS=VGS, ID=250u A VDS=15V, ID=40A VGS= ±25V VDS=60, VGS=0 VDS=48V, VGS=0 VGS=10V, ID=37.5A ID=30A VDS=30V VGS=10V VDS=30V VGS=10V RG=3 RL=1 VGS=0V VDS=30V f=1.0MHz Symbol BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge3 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter Forward On Voltage 3 3 Symbol VSD Trr...