GESD1060 Overview
Features NPN EPITAXIAL PLANAR T RANSISTOR The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A, Package Dimensions REF.