GI60L03 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

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Datasheet Details

Part number	GI60L03
Manufacturer	GTM
File Size	269.04 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI60L03_GTM.pdf

GI60L03 Product details

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 16.5m 55A The GI60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

Features

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 55 35 215 62.5 0.5 -55 ~ +150.

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Published: Sep 4, 2007 |