GI6679 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GI6679 P-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GI6679

Datasheet Details

Part number	GI6679
Manufacturer	GTM
File Size	257.15 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI6679 Datasheet
Additional preview pages of the GI6679 datasheet.

Product details

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9m -75A The GI6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-251 package is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Simple Drive Requirement Lower On-resistance Fast Switching Characteristic

Features

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -30 ±25 -75 -50 -300 89 0.71 -55 ~ +.

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Published: Sep 4, 2007 |