GI9960 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GI9960 N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GI9960

Datasheet Details

Part number	GI9960
Manufacturer	GTM
File Size	262.22 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI9960 Datasheet
Additional preview pages of the GI9960 datasheet.

Product details

Description

The GI9960 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Simple Drive Requirement Low Gate Charge Fast Switching

Features

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 40 ±20 42 26 195 45 -55 ~ +150 0.36.

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Other Datasheets by GTM

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Published: Sep 4, 2007 |