GJ1182 - PNP SILICON EPITAXIAL PLANAR TRANSISTOR

Product Overview

GTM

Part number	GJ1182
Manufacturer	GTM
File Size	304.87 KB
Description	PNP SILICON EPITAXIAL PLANAR TRANSISTOR
Datasheet	GJ1182 Datasheet
Additional preview pages of the GJ1182 datasheet.

The GJ1182 is designed for medium power amplifier applications.

Low collector saturation voltage : VCE(sat)=-0.5V(Typ. ) Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Ratings Unit Junction Temperature Tj +150 к Storage Temperature Tstg -55~+150 к Collector to Base.

📁 Similar Datasheet

Other Datasheets by GTM

Published: Sep 4, 2007 |