GJ1182
GJ1182 is PNP SILICON EPITAXIAL PLANAR TRANSISTOR manufactured by GTM.
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CORPORATION ISSUED DATE :2005/10/06 REVISED DATE :
PNP SILICON EPITAXIAL PLANAR TRANSISTOR
Description
The GJ1182 is designed for medium power amplifier applications.
Features
- Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
Package Dimensions
TO-252
REF.
A B C D E F S
Millimeter
Min.
Max.
2.30 REF.
REF.
G H J K L M R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.90 1.50
5.40 5.80
0.80...
