GJ1386 datasheet, transistor equivalent, GTM

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GJ1386 Features and benefits

P NP EP ITAX I AL S ILI CO N T RANSI STOR The GJ1386 is designed for low frequency applications. Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain .

GJ1386 Application

Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics Package Dimensions TO-252 REF.

GJ1386 Description

Features P NP EP ITAX I AL S ILI CO N T RANSI STOR The GJ1386 is designed for low frequency applications. Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics Package Dimensions TO-252 REF. A B C D E F S Millim.

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