GJ1952 Description
The GJ1952 is designed for high speed switching applications.
GJ1952 Key Features
- Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A -High speed switching, typically tf =0.15 s at IC=
GJ1952 is PNP HIGH SPEED SWITCHING TRANSISTOR manufactured by GTM.
| Part Number | Description |
|---|---|
| GJ1060 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GJ1084 | 5A Low Dropout Positive Adjustable |
| GJ1085 | 3A Low Dropout Positive Adjustable |
| GJ1086 | 1.5A Low Dropout Positive Adjustable |
| GJ1116 | 0.6A Low Dropout Positive Adjustable |
The GJ1952 is designed for high speed switching applications.