GJ5706 transistor equivalent, npn high speed switching transistor.
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
The GJ5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation volt.
*Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dis.
Features
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
The GJ5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dissipation
Package Di.
Image gallery
TAGS
Download (Size : 957.66KB)