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GM2306A Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: GTM

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Datasheet Details

Part number GM2306A
Manufacturer GTM
File Size 265.09 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Download GM2306A Download (PDF)

General Description

*Capable of 2.5V gate drive *Lower on-resistance

Overview

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE :2006/05/03B GM2306A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 40m 5A The GM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GM2306A is universally used for all commercial-industrial surface mount applications.

Key Features

  • Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current , VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range.

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