N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device id.

or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or applic.

Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to par.

GS3010

GS3011

GS3013

GS3015

GS3018K

GS3019

GS3000

GS3002EL

GS3005ELD

GS300T48-5

GS3020

GS3023

GS3024A

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