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Pb Free Plating Product
ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C
GS3018
Description Features
N-CHANNEL MOSFET
BVDSS RDS(ON) ID
30V 8 115mA
N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel.
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.8 1.10 0 0.10 0.8 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.