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GS3018K Datasheet PDF

GTM GS3018K

The GS3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GS3018K is universally used for all commercial-industrial applications.
Part No. GS3018K
Datasheet GS3018K Download
Manufacturer
GTM
Description N-CHANNEL MOSFET
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GS3018K datasheet page 1 preview

DESCRIPTION

FEATURES

*Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Ratings 30 f20 640 500 950 0.35 0.01 -55 ~ +150 Ratings 360 Unit V V mA mA mA W W/ć ć Unit ć/W 1/4 ISSUED DATE :2005/04/27 REVISED DATE :2005/07/12B

ELECTRICAL CHARACTERISTICS

(Tj = 25ć Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage...
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