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GS3018K - N-CHANNEL MOSFET

Datasheet Summary

Description

The GS3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GS3018K is universally used for all commercial-industrial applications.

Features

  • Simple Drive Requirement.
  • Small Package Outline.
  • RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a.

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Datasheet preview – GS3018K

Datasheet Details

Part number GS3018K
Manufacturer GTM
File Size 292.54 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet GS3018K Datasheet
Additional preview pages of the GS3018K datasheet.

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/12B GS3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8 640mA Description The GS3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GS3018K is universally used for all commercial-industrial applications.
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