GTM GS3018
N-CHANNEL MOSFET
| Part No. | GS3018 |
|---|---|
| Datasheet | GS3018 Download |
| Manufacturer |  GTM |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.8 1.10 0 0.10 0.8 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=100 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 30 20 115 75 800 0.225 0.0018 -40 ~ +150 Ratings 556 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GS3018 Page: 1/4 ISSUED DATE :2004/11/24 REVIS...
