Datasheet Details
| Part number | GS7407 |
|---|---|
| Manufacturer | GTM |
| File Size | 273.64 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 GS7407 Datasheet
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General Description
The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.
This device is suitable for use as a load switch or in PWM application.
The GS7407 is universally used for all commercial-industrial applications.
Key Features
- Lower Gate Charge.
- Small Package Outline.
- RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1 A2 D E.