* High breakdown voltage. (BVCEO=120V).
* Low collector output capacitance. (Type.20pF at VCB=10V)
* High transition frequency. (fT=80MHz) Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76
GSD1857
GTM
148.61 KB
Npn epitaxial planar transistor.
www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B GSD1857 POWER TRANSISTOR N P N E P I TA X I A L P L A N A R T R A N S I S T O .
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