GSD1857 transistor equivalent, npn epitaxial planar transistor.
*High breakdown voltage. (BVCEO=120V). *Low collector output capacitance. (Type.20pF at VCB=10V) *High transition frequency. (fT=80MHz)
Package Dimensions
D
E S1
TO-9.
or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or applic.
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