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GSD2656 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The GSD2656 is designed for general purpose amplifier applications.

REF.

Millimeter Min.

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Datasheet Details

Part number GSD2656
Manufacturer GTM
File Size 163.21 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GSD2656 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2006/01/18 REVISED DATE : GSD2656 Description Package Dimensions NPN EPITAXIAL T RANSISTOR The GSD2656 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 30 30 6 1 225 Unit V V V A mW Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) *hFE *fT Cob Min.