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GSD1857 - NPN EPITAXIAL PLANAR TRANSISTOR

Key Features

  • High breakdown voltage. (BVCEO=120V).
  • Low collector output capacitance. (Type.20pF at VCB=10V).
  • High transition frequency. (fT=80MHz) Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (Ta = 25 ) Parameter Ratings Unit Collector to Base Voltage Collector to Emi.

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Datasheet Details

Part number GSD1857
Manufacturer GTM
File Size 148.61 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GSD1857 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B GSD1857 POWER TRANSISTOR N P N E P I TA X I A L P L A N A R T R A N S I S T O R FEATURES *High breakdown voltage. (BVCEO=120V). *Low collector output capacitance. (Type.20pF at VCB=10V) *High transition frequency. (fT=80MHz) Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.