NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Vo.

requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA) Complementary to GSMBT5.

Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA) Complementary to GSMBT5401 Package Dimensi.

GSMBT5089

GSMBT5401

GSMBT1015

GSMBT1623

GSMBT1815

GSMBT2014

GSMBT2222A

GSMBT2907A

GSMBT3904

GSMBT3906

GSMBT4075

GSMBT4076

GSMBT4401